A 27 GHz 20 ps PNP technology

J. Warnock; P. F. Lu; T. C. Chen; K. Y. Toh; J. D. Cressler; K. A. Jenkins; D. D. Tang; J. Burghartz; J. Y.C. Sun; C. T. Chuang; G. P. Li; T. H. Ning

doi:10.1109/IEDM.1989.74201

A 27 GHz 20 ps PNP technology

J. Warnock^*, P. F. Lu, T. C. Chen, K. Y. Toh, J. D. Cressler, K. A. Jenkins, D. D. Tang, J. Burghartz, J. Y.C. Sun, C. T. Chuang, G. P. Li, T. H. Ning

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilayer in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.

原文	English
頁（從 - 到）	903-905
頁數	3
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1989.74201
出版狀態	Published - 1989
事件	1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA 持續時間: 3 12月 1989 → 6 12月 1989

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10.1109/IEDM.1989.74201

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@article{f67068f03c784ce0bde82de32af7ff1e,

title = "A 27 GHz 20 ps PNP technology",

abstract = "Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilayer in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.",

author = "J. Warnock and Lu, {P. F.} and Chen, {T. C.} and Toh, {K. Y.} and Cressler, {J. D.} and Jenkins, {K. A.} and Tang, {D. D.} and J. Burghartz and Sun, {J. Y.C.} and Chuang, {C. T.} and Li, {G. P.} and Ning, {T. H.}",

year = "1989",

doi = "10.1109/IEDM.1989.74201",

language = "English",

pages = "903--905",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 03-12-1989 Through 06-12-1989",

}

TY - JOUR

T1 - A 27 GHz 20 ps PNP technology

AU - Warnock, J.

AU - Lu, P. F.

AU - Chen, T. C.

AU - Toh, K. Y.

AU - Cressler, J. D.

AU - Jenkins, K. A.

AU - Tang, D. D.

AU - Burghartz, J.

AU - Sun, J. Y.C.

AU - Chuang, C. T.

AU - Li, G. P.

AU - Ning, T. H.

PY - 1989

Y1 - 1989

N2 - Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilayer in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.

AB - Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilayer in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.

UR - http://www.scopus.com/inward/record.url?scp=0024920284&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1989.74201

DO - 10.1109/IEDM.1989.74201

M3 - Conference article

AN - SCOPUS:0024920284

SP - 903

EP - 905

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 3 December 1989 through 6 December 1989

ER -

A 27 GHz 20 ps PNP technology

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