A 27 GHz 20 ps PNP technology

J. Warnock*, P. F. Lu, T. C. Chen, K. Y. Toh, J. D. Cressler, K. A. Jenkins, D. D. Tang, J. Burghartz, J. Y.C. Sun, C. T. Chuang, G. P. Li, T. H. Ning


研究成果: Conference article同行評審

19 引文 斯高帕斯(Scopus)


Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilayer in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.

頁(從 - 到)903-905
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1989
事件1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
持續時間: 3 12月 19896 12月 1989


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