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A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application
Chia Lung Hung
*
, Yi Kai Hsiao,
Hao Chung Kuo
*
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光電工程學系
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Keyphrases
4H-SiC
100%
AC Characteristics
16%
Aligned Channels
100%
Channel Gating
100%
Charge Switching
16%
DC Characteristics
33%
Delay Time
16%
Gate Charge
16%
High-frequency Applications
100%
High-frequency Switching
16%
Innovative Process
16%
Input Capacitance
16%
Process Flow
16%
Self-aligned
100%
Split Gate
100%
Switching Delay
16%
Switching Performance
16%
Technology Computer-aided Design Simulation
16%
VDMOSFET
100%
Engineering
Computer Aided Design
100%
Delay Time
100%
Gate Charge
100%
Input Capacitance
100%
Process Flow
100%