A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application

Chia Lung Hung*, Yi Kai Hsiao, Hao Chung Kuo

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Simulation of a 1700 V 4H-SiC VDMOSFET with self-aligned channel and split gate (SASG) architecture for high frequency switching performance is reported. An innovative process flow to fabricate the 1700 V SASG VDMOSFET is proposed at first time and the DC and AC characteristics of the proposed SASG VDMOSFET are compared with conventional VDMOSFET through TCAD (Technology Computer Aided Design) simulation. The gate charge, switching delay time and input capacitance have been improved 32%, 45% and 28% on the SASG VDMOSFET, respectively without sacrificing DC characteristics.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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