This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P 1 dBof 22 dBm, P sat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.
|頁（從 - 到）||112-119|
|期刊||IEEE Transactions on Microwave Theory and Techniques|
|出版狀態||Published - 1 一月 2012|