A 10Gb/s laser-diode driver with active back-termination in 0.18μm CMOS

Chia-Ming Tsai*, Mao Cheng Chiu

*此作品的通信作者

研究成果: Conference contribution同行評審

11 引文 斯高帕斯(Scopus)

摘要

A low-voltage circuit topology for active back-termination enables low-cost CMOS solutions. A diode-connected NMOS transistor with a feedback network provides back-termination capability. The chip has a modulation current range of 60mA. Measured rise/fall time and jitter are ∼40ps and ∼13ps pp, respectively. The return loss for a 25Ω system is better than 8dB for a frequency range of DC to 8GHz. The IC consumes 240mW from a 1.8V supply.

原文English
主出版物標題2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC
DOIs
出版狀態Published - 21 八月 2008
事件2008 IEEE International Solid State Circuits Conference, ISSCC - San Francisco, CA, United States
持續時間: 3 二月 20087 二月 2008

出版系列

名字Digest of Technical Papers - IEEE International Solid-State Circuits Conference
51
ISSN(列印)0193-6530

Conference

Conference2008 IEEE International Solid State Circuits Conference, ISSCC
國家/地區United States
城市San Francisco, CA
期間3/02/087/02/08

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