TY - GEN
T1 - A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology
AU - Wang, Teng Yi
AU - Chen, Wei-Zen
AU - Tsai, Chia-Ming
AU - Huang, Li Ren
AU - Li, Day Uei
PY - 2005/12/1
Y1 - 2005/12/1
N2 - This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2psp-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 × 940 μm 2.
AB - This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2psp-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 × 940 μm 2.
UR - http://www.scopus.com/inward/record.url?scp=33745458685&partnerID=8YFLogxK
U2 - 10.1109/VDAT.2005.1500068
DO - 10.1109/VDAT.2005.1500068
M3 - Conference contribution
AN - SCOPUS:33745458685
SN - 0780390601
SN - 9780780390607
T3 - 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
SP - 253
EP - 256
BT - 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
T2 - 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Y2 - 27 April 2005 through 29 April 2005
ER -