A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao*, Wu Wei Tsai, Chun Yu Chen, Hsiao-Wen Zan, Hsin-Fei Meng

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

原文English
主出版物標題2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
出版狀態Published - 1 12月 2009
事件2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
持續時間: 7 12月 20099 12月 2009

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
國家/地區United States
城市Baltimore, MD
期間7/12/099/12/09

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