摘要
An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.
原文 | American English |
---|---|
頁面 | 152-+ |
DOIs | |
出版狀態 | Published - 2007 |
事件 | Progress in Electromagnetics Research Symposium (PIERS 2007) - Beijing, China 持續時間: 26 3月 2007 → 30 3月 2007 |
Conference
Conference | Progress in Electromagnetics Research Symposium (PIERS 2007) |
---|---|
國家/地區 | China |
城市 | Beijing |
期間 | 26/03/07 → 30/03/07 |