A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS

Chia Jen Liang, Ching Wen Chiang, Jia Zhou, Chao Jen Tien, Rulin Huang, Kuei-Ann Wen, Mau Chung Frank Chang, Yen Cheng Kuan

研究成果: Conference contribution同行評審

摘要

This paper presents a millimeter-wave (mmWave) ultra-wideband low-power low noise amplifier (LNA) that supports the entire 5G FR2 (24.25-52.6 GHz) and beyond. An auxiliary amplifier is exploited to extend the bandwidth with the required input return loss (S11) and high matching gain for suppressing noise of subsequent stages. In addition, gain peaking at the low/mid band (< 30/30-45 GHz) and impedance matching at the high band (> 45 GHz) are used jointly to increase the operating frequency range. Furthermore, large-valued inductors with high self-resonant frequencies (SRFs) are achieved through a cascode spiral structure. This LNA is fabricated in a 28-nm bulk CMOS technology. At a 0.6-V supply voltage (VDD) applied on the main stages, this LNA achieves an 18.4-dB flat power gain, a 3.8-5.7-dB noise figure (NF), and a <-6-dB S11 over 19.5-62.5 GHz (BW3dB) while consuming 13.7 mW. This LNA occupies 0.25 mm2and features ESD protection.

原文English
主出版物標題2021 IEEE MTT-S International Microwave Symposium, IMS 2021
發行者Institute of Electrical and Electronics Engineers Inc.
頁面768-771
頁數4
ISBN(電子)9781665403078
DOIs
出版狀態Published - 7 6月 2021
事件2021 IEEE MTT-S International Microwave Symposium, IMS 2021 - Virtual, Atlanta, United States
持續時間: 7 6月 202125 6月 2021

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2021-June
ISSN(列印)0149-645X

Conference

Conference2021 IEEE MTT-S International Microwave Symposium, IMS 2021
國家/地區United States
城市Virtual, Atlanta
期間7/06/2125/06/21

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