@inproceedings{8b11992fc55b473da41e13df13f82a02,
title = "A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS",
abstract = "This paper presents a millimeter-wave (mmWave) ultra-wideband low-power low noise amplifier (LNA) that supports the entire 5G FR2 (24.25-52.6 GHz) and beyond. An auxiliary amplifier is exploited to extend the bandwidth with the required input return loss (S11) and high matching gain for suppressing noise of subsequent stages. In addition, gain peaking at the low/mid band (< 30/30-45 GHz) and impedance matching at the high band (> 45 GHz) are used jointly to increase the operating frequency range. Furthermore, large-valued inductors with high self-resonant frequencies (SRFs) are achieved through a cascode spiral structure. This LNA is fabricated in a 28-nm bulk CMOS technology. At a 0.6-V supply voltage (VDD) applied on the main stages, this LNA achieves an 18.4-dB flat power gain, a 3.8-5.7-dB noise figure (NF), and a <-6-dB S11 over 19.5-62.5 GHz (BW3dB) while consuming 13.7 mW. This LNA occupies 0.25 mm2and features ESD protection. ",
keywords = "28-nm CMOS, 5G NR, carrier aggregation (CA), FR2, low noise amplifier (LNA), low supply voltage (VDD), low-power, millimeter-wave (mmWave), ultrawideband (UWB)",
author = "Liang, {Chia Jen} and Chiang, {Ching Wen} and Jia Zhou and Tien, {Chao Jen} and Rulin Huang and Kuei-Ann Wen and Chang, {Mau Chung Frank} and Kuan, {Yen Cheng}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; null ; Conference date: 07-06-2021 Through 25-06-2021",
year = "2021",
month = jun,
day = "7",
doi = "10.1109/IMS19712.2021.9574964",
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "768--771",
booktitle = "2021 IEEE MTT-S International Microwave Symposium, IMS 2021",
address = "United States",
}