摘要
This paper reports our 77GHz power-amplifier designs using WIN 0.1μm GaAs pHEMT process provided by the commercial WIN foundry. The first two stages of the power amplifier is made of common-source transistors for gain amplification, and then followed by two- and four-paralleled transistors where the 3dB two-way Wilkinson power splitters/combiners for large output power delivery are used. All the by-pass capacitors for drain and gate biases have been optimized to have small series impedance at W-band. The input DC-blocking capacitor is made coupled lines, which also functions as tuning circuit. With 2.5V and 350mA drain bias, the small-signal gain is 12dB, as measured on-wafer at room temperature; the output-referred 1dB compression point is 6dBm. With 3dBm input power, the saturated output power is around 8.6dBm. Good input- and output-port matching has also been observed. The chip size is 1000×2500μm2and it consumes 875mW.
原文 | English |
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DOIs | |
出版狀態 | Published - 17 10月 2014 |
事件 | 31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014 - Beijing, 中國 持續時間: 16 8月 2014 → 23 8月 2014 |
Conference
Conference | 31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014 |
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國家/地區 | 中國 |
城市 | Beijing |
期間 | 16/08/14 → 23/08/14 |