62.8GHz fmax LP-CVD epitaxially grown silicon base bipolar transistor with extremely high early voltage of 85.7V

C. Yoshino*, K. Inou, S. Matsuda, H. Nakajima, Y. Tsuboi, H. Naruse, H. Sugaya, Y. Katsumata, H. Iwai

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

指紋

深入研究「62.8GHz fmax LP-CVD epitaxially grown silicon base bipolar transistor with extremely high early voltage of 85.7V」主題。共同形成了獨特的指紋。

Engineering & Materials Science