62.3: A novel nanostructure enhanced Pi-cell for transition-rate improvement

Szu Fen F. Chen*, Yu Yun Chang, Huang-Ming Chen, Han Ping D. Shieh

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

It is well known that a Pi-cell must be operated in bend state transited from splay state. Before starting state transition, the nucleation must be happened uniformly to whole active area in a Pi-cell. In this study, Nanostructure Enhanced Pi-cell (NE-Pi-cell) was proposed. Not only the random distribution of silicon oxide nano-particles was investigated for decreasing the transition time, but also the limitation of increasing nano-particle density was also studied well. The reduction rates of splay-to-bend and twist-to-splay transition time were over 99.9% with nanostructure surfaces. However, the response time and V-T curve remained the same as un-treated Pi-cell.

原文English
主出版物標題48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
頁面932-934
頁數3
DOIs
出版狀態Published - 1 12月 2010
事件48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
持續時間: 23 5月 201028 5月 2010

出版系列

名字48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
2

Conference

Conference48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
國家/地區United States
城市Seattle, WA
期間23/05/1028/05/10

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