@inproceedings{22df6c5230264a5b8a9fc5dba5190c42,
title = "400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes",
abstract = "400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.",
keywords = "Aluminum gallium nitride, Carrier confinement, Crystalline materials, Degradation, Electroluminescence, Epitaxial growth, Epitaxial layers, Gallium nitride, Light emitting diodes, Quantum well devices",
author = "Chang, {S. J.} and Cheng-Huang Kuo and Su, {Y. K.} and Wu, {L. W.} and Sheu, {J. K.} and Wen, {T. C.} and Lai, {W. C.} and Chen, {J. F.} and Tsai, {J. M.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/COS.2003.1278172",
language = "English",
series = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "91--94",
editor = "Chan, {K. T.} and Kwok, {H. S.}",
booktitle = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",
address = "United States",
note = "6th Chinese Optoelectronics Symposium, COES 2003 ; Conference date: 12-09-2003 Through 14-09-2003",
}