400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S. J. Chang; Cheng-Huang Kuo; Y. K. Su; L. W. Wu; J. K. Sheu; T. C. Wen; W. C. Lai; J. F. Chen; J. M. Tsai

doi:10.1109/JSTQE.2002.801677

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S. J. Chang^*, Cheng-Huang Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai

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照明與能源光電研究所

研究成果: Article › 同行評審

231 引文斯高帕斯（Scopus）

摘要

The 400-nm In_0.05Ga_0.95N-GaN MQW light-emitting diode (LED) structure and In_0.05Ga_0.95N-Al_0.1Ga_0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al_0.1Ga_0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

原文	English
頁（從 - 到）	744-748
頁數	5
期刊	IEEE Journal on Selected Topics in Quantum Electronics
卷	8
發行號	4
DOIs	https://doi.org/10.1109/JSTQE.2002.801677
出版狀態	Published - 7月 2002

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10.1109/JSTQE.2002.801677

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@article{81e9aee072d24b848bf1f6dde39f14f4,

title = "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes",

abstract = "The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.",

keywords = "AlGaN, Light-emitting diode, Multiquantum well, Organometallic vapor phase epitaxy",

author = "Chang, {S. J.} and Cheng-Huang Kuo and Su, {Y. K.} and Wu, {L. W.} and Sheu, {J. K.} and Wen, {T. C.} and Lai, {W. C.} and Chen, {J. F.} and Tsai, {J. M.}",

year = "2002",

month = jul,

doi = "10.1109/JSTQE.2002.801677",

language = "English",

volume = "8",

pages = "744--748",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

AU - Chang, S. J.

AU - Kuo, Cheng-Huang

AU - Su, Y. K.

AU - Wu, L. W.

AU - Sheu, J. K.

AU - Wen, T. C.

AU - Lai, W. C.

AU - Chen, J. F.

AU - Tsai, J. M.

PY - 2002/7

Y1 - 2002/7

N2 - The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

AB - The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

KW - AlGaN

KW - Light-emitting diode

KW - Multiquantum well

KW - Organometallic vapor phase epitaxy

UR - http://www.scopus.com/inward/record.url?scp=0036661965&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2002.801677

DO - 10.1109/JSTQE.2002.801677

M3 - Article

AN - SCOPUS:0036661965

SN - 1077-260X

VL - 8

SP - 744

EP - 748

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

ER -

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

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