This paper presents a new bit-interleaving 12T subthreshold SRAM cell with Data-Aware Power-Cutoff (DAPC) Write-assist to improve the Write-ability to mitigate increased device variations at low supply voltage under deep sub-100 nm processes. The disturb-free feature facilitates the bit-interleaving architecture that can reduce multiple-bit errors in a single word and enhance soft error immunity by employing error checking and correction (ECC) techniques. The proposed 12T SRAM cell is demonstrated by a 4 kb SRAM macro implemented in 40 nm general purpose (40GP) CMOS technology. The test chip operates from typical VDD to 350 mV (∼100 mV lower than the threshold voltage) with VDDMIN limited by Read operation. Data can be written successfully for VDD down to 300 mV. The measured maximum operation frequency is 11.5 MHz with total power consumption of 22 μW at 350 mV, 25°C.
|頁（從 - 到）||2578-2585|
|期刊||IEEE Transactions on Circuits and Systems I: Regular Papers|
|出版狀態||Published - 1 1月 2014|