3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

Chung Wei Hsu; Chia Chen Wan; I. Ting Wang; Mei Chin Chen; Chun Li Lo; Yao Jen Lee; Wen Yueh Jang; Chen Hsi Lin; Tuo-Hung Hou

doi:10.1109/IEDM.2013.6724601

3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

Chung Wei Hsu, Chia Chen Wan, I. Ting Wang, Mei Chin Chen, Chun Li Lo, Yao Jen Lee, Wen Yueh Jang, Chen Hsi Lin, Tuo-Hung Hou

研究成果: Conference contribution › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

原文	English
主出版物標題	2013 IEEE International Electron Devices Meeting, IEDM 2013
發行者	IEEE
頁面	10.4.1-10.4.4
頁數	4
ISBN（列印）	9781479923076
DOIs	https://doi.org/10.1109/IEDM.2013.6724601
出版狀態	Published - 12月 2013
事件	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States 持續時間: 9 12月 2013 → 11 12月 2013

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
國家/地區	United States
城市	Washington, DC
期間	9/12/13 → 11/12/13

存取文件

10.1109/IEDM.2013.6724601

其它文件與鏈接

Link to publication in Scopus

引用此

Hsu, C. W., Wan, C. C., Wang, I. T., Chen, M. C., Lo, C. L., Lee, Y. J., Jang, W. Y., Lin, C. H., & Hou, T-H. (2013). 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current. 於 2013 IEEE International Electron Devices Meeting, IEDM 2013 (頁 10.4.1-10.4.4). [6724601] (Technical Digest - International Electron Devices Meeting, IEDM). IEEE. https://doi.org/10.1109/IEDM.2013.6724601

@inproceedings{134514bbe59f41459a5027bde2c1b4da,

title = "3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current",

abstract = "The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.",

author = "Hsu, {Chung Wei} and Wan, {Chia Chen} and Wang, {I. Ting} and Chen, {Mei Chin} and Lo, {Chun Li} and Lee, {Yao Jen} and Jang, {Wen Yueh} and Lin, {Chen Hsi} and Tuo-Hung Hou",

year = "2013",

month = dec,

doi = "10.1109/IEDM.2013.6724601",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "IEEE",

pages = "10.4.1--10.4.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "null ; Conference date: 09-12-2013 Through 11-12-2013",

}

Hsu, CW, Wan, CC, Wang, IT, Chen, MC, Lo, CL, Lee, YJ, Jang, WY, Lin, CH & Hou, T-H 2013, 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current. 於 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724601, Technical Digest - International Electron Devices Meeting, IEDM, IEEE, 頁 10.4.1-10.4.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 9/12/13. https://doi.org/10.1109/IEDM.2013.6724601

TY - GEN

T1 - 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

AU - Hsu, Chung Wei

AU - Wan, Chia Chen

AU - Wang, I. Ting

AU - Chen, Mei Chin

AU - Lo, Chun Li

AU - Lee, Yao Jen

AU - Jang, Wen Yueh

AU - Lin, Chen Hsi

AU - Hou, Tuo-Hung

PY - 2013/12

Y1 - 2013/12

N2 - The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

AB - The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

UR - http://www.scopus.com/inward/record.url?scp=84894346480&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2013.6724601

DO - 10.1109/IEDM.2013.6724601

M3 - Conference contribution

AN - SCOPUS:84894346480

SN - 9781479923076

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 10.4.1-10.4.4

BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

PB - IEEE

Y2 - 9 December 2013 through 11 December 2013

ER -

3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

摘要

出版系列

Conference

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