3D-TCAD simulation study of the contact all around T-FinFET structure for 10nm metal-oxide-semiconductor field-effect transistor

We propose a new device structure, namely CAA T-FinFET, for 10nm MOSFETs with using contact all around (CAA) structure. According to 3D simulation study, the CAA T-FinFET possess many advantages over the conventional FinFET structure, such as short channel effect (SCE) suppression by self-aligned oxide (SA oxide), parasitic leakage path isolation with body-tied bulk, source/drain series resistance reducing and fin to fin pitch scaling by contact all around process. Base on heterogeneous bulk for strain application, CAA T-FinFET has better electrical performance and easy process control. All these advantages are achieved by depositing a self-aligned oxide after isotropic etching in S/D region. Contact all around can efficiently solve the series resistance degradation and pitch scaling by replacing diamond-shape S/D stressor with the full contact metal. CAA T-FinFET has high potential to be applied to the varied heterogeneous substrate and high mobility channel (Ge and III-V) MOSFETs by SA oxide.