3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy

Heng Li, Chiao Yun Chang, Hui Yu Cheng, Wei Liang Chen, Yi Hsin Huang, Tien-chang Lu, Yu Ming Chang

研究成果: Conference contribution同行評審

摘要

The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E 2 high Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E 2 high Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XX
編輯Heonsu Jeon, Li-Wei Tu, Martin Strassburg, Michael R. Krames
發行者SPIE
ISBN(電子)9781510600034
DOIs
出版狀態Published - 1 1月 2016
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - San Francisco, United States
持續時間: 15 2月 201617 2月 2016

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9768
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
國家/地區United States
城市San Francisco
期間15/02/1617/02/16

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