@inproceedings{0143b7663271425084f2a70558762095,
title = "3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx",
abstract = "The major challenge of FRAM scaling is to maintain high polarization density on the vertical sidewall of 3D ferroelectric capacitors. We reported a CMOS-compatible HfZrOx FRAM technology that shows a wake-up free character, 1010/109 endurance cycles, extrapolated 10-year retention at 105°C/85°C, and initial Pr = 25/18 μC/cm2 for 2D/3D FRAM, respectively. The strain effect at atomic interfaces is considered by the density functional theory (DFT) simulation. Two simple yet effective methods, stress engineering and optimized interface orientation, are proposed to facilitate preferential transition from tetragonal to orthorhombic phase. The test chip of 2T2C 3D FRAM demonstrates a fast sensing speed of 17 MHz at VDD of 4V.",
author = "Lin, {Y. D.} and Tang, {Y. T.} and Sheu, {S. S.} and Hou, {T. H.} and Lo, {W. C.} and Lee, {M. H.} and Chang, {M. F.} and King, {Y. C.} and Lin, {C. J.} and Lee, {H. Y.} and Yeh, {P. C.} and Yang, {H. Y.} and Yeh, {P. S.} and Wang, {C. Y.} and Su, {J. W.} and Li, {S. H.}",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993504",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
address = "United States",
note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
}