3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec; Chung Wei Hsu; I. Ting Wang; Wei Li Lai; Che Chia Chang; Taifang Wang; Karol Fröhlich; Chia Hua Ho; Chen Hsi Lin; Tuo-Hung Hou

doi:10.1007/s11432-016-5566-0

3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec^*, Chung Wei Hsu, I. Ting Wang, Wei Li Lai, Che Chia Chang, Taifang Wang, Karol Fröhlich, Chia Hua Ho, Chen Hsi Lin, Tuo-Hung Hou

^*此作品的通信作者

研究成果: Review article › 同行評審

53 引文斯高帕斯（Scopus）

摘要

In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO₂-based filamentary 3D Vertical ReRAM as well as TaO_x/TiO₂ bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

原文	English
文章編號	061403
頁數	21
期刊	Science China Information Sciences
卷	59
發行號	6
DOIs	https://doi.org/10.1007/s11432-016-5566-0
出版狀態	Published - 1 6月 2016

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10.1007/s11432-016-5566-0

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title = "3D resistive RAM cell design for high-density storage class memory—a review",

abstract = "In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.",

keywords = "3D integration, RRAM, ReRAM, atomic layer deposition, cross-point, crossbar, resistive switching, selector, storage class memory",

author = "Boris Hudec and Hsu, {Chung Wei} and Wang, {I. Ting} and Lai, {Wei Li} and Chang, {Che Chia} and Taifang Wang and Karol Fr{\"o}hlich and Ho, {Chia Hua} and Lin, {Chen Hsi} and Tuo-Hung Hou",

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AU - Hudec, Boris

AU - Hsu, Chung Wei

AU - Wang, I. Ting

AU - Lai, Wei Li

AU - Chang, Che Chia

AU - Wang, Taifang

AU - Fröhlich, Karol

AU - Ho, Chia Hua

AU - Lin, Chen Hsi

AU - Hou, Tuo-Hung

PY - 2016/6/1

Y1 - 2016/6/1

N2 - In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

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KW - 3D integration

KW - RRAM

KW - ReRAM

KW - atomic layer deposition

KW - cross-point

KW - crossbar

KW - resistive switching

KW - selector

KW - storage class memory

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JO - Science China Information Sciences

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ER -

3D resistive RAM cell design for high-density storage class memory—a review

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