3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec*, Chung Wei Hsu, I. Ting Wang, Wei Li Lai, Che Chia Chang, Taifang Wang, Karol Fröhlich, Chia Hua Ho, Chen Hsi Lin, Tuo-Hung Hou

*此作品的通信作者

研究成果: Review article同行評審

40 引文 斯高帕斯(Scopus)

摘要

In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

原文English
文章編號061403
頁數21
期刊Science China Information Sciences
59
發行號6
DOIs
出版狀態Published - 1 6月 2016

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