@inproceedings{e8e8bbcc181d4869ace0ed11c810b050,
title = "3D finite-element analysis of metal nanocrystal memories variations",
abstract = "We have shown the process variation effects from nanocrystal size, density, registry and gate length in 20 - 90 nm metal nanocrystal memory technology by 3D finite-element analysis. Conventional 1D analysis in the gate stack will result in severe miscalculation of bit-error-rate due to neglecting the fringing fields and percolation path in the memory cell. We also present the statistical metrology on memory windows from nanocrystal placement control and the use of nanowire devices. We conclude that the self-assembled nanocrystals in the gate stack can fit the parametric yield required for 20nm technology.",
keywords = "Bit-error rate, Flash memory, Metal nanocrystals, Process variation",
author = "Shaw, {Jonathan T.} and Tuo-Hung Hou and Hassan Raza and Kan, {Edwin C.}",
year = "2009",
month = oct,
day = "27",
doi = "10.1109/IWCE.2009.5091077",
language = "English",
isbn = "9781424439270",
series = "Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009",
booktitle = "Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009",
note = "2009 13th International Workshop on Computational Electronics, IWCE 2009 ; Conference date: 27-05-2009 Through 29-05-2009",
}