3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

Hui Wen Cheng*, Fu Hai Li, Ming Hung Han, Chun Yen Yiu, Chia Hui Yu, Kuo Fu Lee, Yiming Li

*此作品的通信作者

研究成果: Conference contribution同行評審

31 引文 斯高帕斯(Scopus)

摘要

This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σVth) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized σID > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.

原文English
主出版物標題2010 IEEE International Electron Devices Meeting, IEDM 2010
頁面15.6.1-15.6.4
DOIs
出版狀態Published - 2010
事件2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
持續時間: 6 十二月 20108 十二月 2010

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
國家/地區United States
城市San Francisco, CA
期間6/12/108/12/10

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