TY - GEN
T1 - 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology
AU - Saraya, T.
AU - Itou, K.
AU - Takakura, T.
AU - Fukui, M.
AU - Suzuki, S.
AU - Takeuchi, K.
AU - Tsukuda, M.
AU - Satoh, K.
AU - Matsudai, T.
AU - Kakushima, K.
AU - Hoshii, T.
AU - Tsutsui, K.
AU - Iwai, H.
AU - Ogura, A.
AU - Saito, W.
AU - Nishizawa, S.
AU - Omura, I.
AU - Ohashi, H.
AU - Hiramoto, T.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/12
Y1 - 2020/12/12
N2 - Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.
AB - Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.
UR - http://www.scopus.com/inward/record.url?scp=85102955355&partnerID=8YFLogxK
U2 - 10.1109/IEDM13553.2020.9371909
DO - 10.1109/IEDM13553.2020.9371909
M3 - Conference contribution
AN - SCOPUS:85102955355
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 5.3.1-5.3.4
BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Y2 - 12 December 2020 through 18 December 2020
ER -