3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

T. Saraya*, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.

原文English
主出版物標題2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面5.3.1-5.3.4
ISBN(電子)9781728188881
DOIs
出版狀態Published - 12 十二月 2020
事件66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
持續時間: 12 十二月 202018 十二月 2020

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2020-December
ISSN(列印)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區United States
城市Virtual, San Francisco
期間12/12/2018/12/20

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