30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

Chia Ta Chang; Heng-Tung Hsu; Edward Yi Chang; Chien I. Kuo; Jui Chien Huang; Chung Yu Lu; Yasuyuki Miyamoto

doi:10.1109/LED.2009.2037167

30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

Chia Ta Chang^*, Heng-Tung Hsu, Edward Yi Chang, Chien I. Kuo, Jui Chien Huang, Chung Yu Lu, Yasuyuki Miyamoto

^*此作品的通信作者

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at V_GS=-3 V and V _DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

原文	English
文章編號	5357371
頁（從 - 到）	105-107
頁數	3
期刊	Ieee Electron Device Letters
卷	31
發行號	2
DOIs	https://doi.org/10.1109/LED.2009.2037167
出版狀態	Published - 2月 2010

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title = "30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs",

abstract = "We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.",

keywords = "AlGaN/GaN, High-electron mobility transistor (HEMT), Noise figure, Recessed gate",

author = "Chang, {Chia Ta} and Heng-Tung Hsu and Chang, {Edward Yi} and Kuo, {Chien I.} and Huang, {Jui Chien} and Lu, {Chung Yu} and Yasuyuki Miyamoto",

year = "2010",

month = feb,

doi = "10.1109/LED.2009.2037167",

language = "English",

volume = "31",

pages = "105--107",

journal = "Ieee Electron Device Letters",

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TY - JOUR

T1 - 30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

AU - Chang, Chia Ta

AU - Hsu, Heng-Tung

AU - Chang, Edward Yi

AU - Kuo, Chien I.

AU - Huang, Jui Chien

AU - Lu, Chung Yu

AU - Miyamoto, Yasuyuki

PY - 2010/2

Y1 - 2010/2

N2 - We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

AB - We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

KW - AlGaN/GaN

KW - High-electron mobility transistor (HEMT)

KW - Noise figure

KW - Recessed gate

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U2 - 10.1109/LED.2009.2037167

DO - 10.1109/LED.2009.2037167

M3 - Article

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SN - 0741-3106

VL - 31

SP - 105

EP - 107

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 2

M1 - 5357371

ER -

30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

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