3-mm Double-Heterojunction Microwave Power HEMT Fabricated by Selective RIE

R. M. Nagarajan; Krishna P. Pande; J. M. van Hove; Robert J. Schuelke; G. P. Thomes; J. D. Jorgenson; Edward Yi Chang

doi:10.1109/55.17834

3-mm Double-Heterojunction Microwave Power HEMT Fabricated by Selective RIE

R. M. Nagarajan, Krishna P. Pande, J. M. van Hove, Robert J. Schuelke, G. P. Thomes, J. D. Jorgenson, Edward Yi Chang

材料科學與工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	530-532
頁數	3
期刊	IEEE Electron Device Letters
卷	9
發行號	10
DOIs	https://doi.org/10.1109/55.17834
出版狀態	Published - 1 1月 1988

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10.1109/55.17834

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引用此

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AU - Jorgenson, J. D.

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