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3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM
Md Aftab Baig
, Cheng Jui Yeh
, Shu Wei Chang
, Bo Han Qiu
, Xiao Shan Huang
, Cheng Hsien Tsai
, Yu Ming Chang
, Po Jung Sung
,
Chun Jung Su
, Ta Chun Cho
, Sourav De
, Darsen Lu
*
, Yao Jen Lee
, Wen Hsi Lee
, Wen Fa Wu
, Wen Kuan Yeh
*
此作品的通信作者
電子物理學系
國際半導體產業學院
研究成果
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同行評審
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引文 斯高帕斯(Scopus)
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Keyphrases
3D Stacking
14%
Allowable Current
14%
Berkeley Short-channel IGFET Model-common multigate (BSIM-CMG)
14%
Compact Model
14%
Complementary FET
100%
Computational Error
14%
Current Drive
14%
Device Linearity
28%
Drive Strength
14%
Edge Intelligence
14%
Fin Field-effect Transistor (FinFET)
14%
FinFET Devices
14%
High-density Array
14%
In-memory
100%
Inference Accuracy
14%
Integration Density
14%
Monolithic 3-D (M3-D)
14%
Multi-fold
14%
Neural Network Inference
14%
Operational Delay
14%
Power Consumption
14%
Simulation Platform
14%
SPICE Model
14%
SRAM Array
14%
SRAM Cell
28%
Stacked Layer
14%
Transistor
28%
Ultra-high Density
14%
Weighted Sums
14%
Wiring
14%
Write Power
14%
Computer Science
Edge Intelligence
100%
Memory Operation
100%
Network Inference
100%
Neural Network
100%
Power Consumption
100%
Engineering
Current Drive
14%
Electric Power Utilization
14%
Field Effect Transistor
100%
Nonlinearity
28%
Simulation Platform
14%
SPICE
14%
Material Science
Density
28%
Field Effect Transistor
100%
Silicon
14%
Transistor
28%