2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

Ming-Dou Ker*, Tzu Ming Wang, Hung Tai Liao

*此作品的通信作者

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.

    原文English
    主出版物標題2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
    頁面820-823
    頁數4
    DOIs
    出版狀態Published - 19 9月 2008
    事件2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
    持續時間: 18 5月 200821 5月 2008

    出版系列

    名字Proceedings - IEEE International Symposium on Circuits and Systems
    ISSN(列印)0271-4310

    Conference

    Conference2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
    國家/地區United States
    城市Seattle, WA
    期間18/05/0821/05/08

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