28nm near/sub-threshold dual-port FIFO memory for shared queues in multi-sensor applications

Yi Chun Wu, Po-Tsang Huang, Shang Lin Wu, Sheng Chi Lung, Wei Chang Wang, Wei Hwang, Ching Te Chuang

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

For an energy-limited multi-sensing platform, ultra-low-power queueing design is one of the critical challenge to store low-speed sensing data with various sampling frequencies. In this paper, a near/sub-threshold dual-port first-in-first-out (FIFO) memory is proposed for shared queues in a unified queuing architecture. This ultra-low-power FIFO memory is designed and implemented using bit-interleaved 12T near-/sub-threshold dual-port SRAM bit-cells, write/read-assist circuitries, and adaptive timing tracking circuits. The 12T bit-cell eliminates both read and write half-select disturbance. Additionally, an adaptive timing tracing circuitry and negative bit-line circuits are employed to against PVT variation and to enhance write ability, respectively. Furthermore, the self-timed pointers and short ripple bit-lines are designed to avoid global long metal lines with large loading. A 256×16 dual-port FIFO memory is implemented in UMC 28nm HKMG CMOS technology. This FIFO memory can be operated at 0.4V with 10MHz for read operations. Moreover, up to 60% power reduction can be achieved based on the proposed design techniques.

原文English
主出版物標題2018 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-4
頁數4
ISBN(電子)9781538642603
DOIs
出版狀態Published - 5 6月 2018
事件2018 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2018 - Hsinchu, Taiwan
持續時間: 16 4月 201819 4月 2018

出版系列

名字2018 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2018

Conference

Conference2018 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2018
國家/地區Taiwan
城市Hsinchu
期間16/04/1819/04/18

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