25 GHz HBT frequency dividers

R. B. Nubling*, N. H. Sheng, K. C. Wang, Mau-Chung Chang, W. J. Ho, G. J. Sullivan, C. W. Farley, P. M. Asbeck

*此作品的通信作者

    研究成果: Paper同行評審

    16 引文 斯高帕斯(Scopus)

    摘要

    A report is presented on a regenerative frequency divider and a static frequency divider implemented with (AlGa)As/GaAs heterojunction bipolar transistors (HBTs). Both dividers have been operated at input frequencies higher than 25 GHz. Also described is a frequency divider implemented with AlInAs/GaInAs HBTs operating up to 17.1 GHz, at considerably reduced power. These frequency dividers are among the fastest ever reported for each of these circuit types and illustrate the feasibility of using direct frequency division in microwave systems up to Ku band.

    原文English
    頁面125-128
    頁數4
    DOIs
    出版狀態Published - 10月 1989
    事件11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 - San Diego, CA, USA
    持續時間: 22 10月 198925 10月 1989

    Conference

    Conference11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989
    城市San Diego, CA, USA
    期間22/10/8925/10/89

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