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20.1 A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver for High dV/dt SiC Power Switch
Si Yi Li
, Wei Chien Hung
, Tz Wun Wang
, Ya Ting Hsu
,
Ke Horng Chen
, Kuo Lin Zheng
, Ying Hsi Lin
, Shian Ru Lin
, Tsung Yen Tsai
電機工程學系
研究成果
›
同行評審
10
引文 斯高帕斯(Scopus)
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Keyphrases
Silicon Carbide
100%
GaN-on-Si
100%
Gate Driver
100%
Power Switch
100%
Common Mode
100%
Silicon Carbide (SiC) MOSFET
100%
Common Mode Transient Immunity
100%
Duty Cycle
75%
Transient Disturbance
50%
Control Signal
50%
Demodulator
50%
Switching Nodes
50%
Regeneration
25%
Hysteresis
25%
Transformer
25%
Transient Period
25%
Supply Voltage
25%
Driving Voltage
25%
Low Loss
25%
Low Impedance
25%
Transmitter
25%
Blocking Voltage
25%
High Side
25%
Fast Switching
25%
Parasitic Capacitance
25%
MOSFET Device
25%
Noise Coupling
25%
Gate Capacitance
25%
Parasitic Inductance
25%
Driving Signal
25%
Voltage Source
25%
Parasitic Resistance Effects
25%
Demodulation
25%
Through the Gate
25%
Mode Shift
25%
Fault Tolerance Mechanism
25%
Isolated Gate Driver
25%
Low-side
25%
Galvanic Isolation
25%
High Voltage Switch
25%
Efficient Energy Storage
25%
Common-mode Current
25%
High Voltage Current
25%
High Current Application
25%
Electric Motor Drives
25%
Capacitive Isolation
25%
Input Common Mode Range
25%
Power Conversion System
25%
Isolation Barriers
25%
Electric Vehicle Drive
25%
Electric Railway
25%
Railway Drive
25%
High Temperature Tolerance
25%
Engineering
Transients
100%
Common Mode
100%
Power Switch
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Duty Cycle
37%
Fits and Tolerances
25%
Control Signal
25%
Demodulator
25%
Nodes
12%
Supply Voltage
12%
Parasitic Resistance
12%
Motor Drive
12%
Comparator
12%
Capacitive
12%
Demodulation
12%
Parasitic Capacitance
12%
Energy Storage
12%
Voltage Source
12%
Railway
12%
Electric Vehicle
12%
Switching Node
12%
Drive Voltage
12%
High Current Application
12%
Negative Supply
12%
Power Conversion System
12%
Electric Motor
12%