2-bit Poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate

Keyphrases

• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• 2-bit 100%
• Non-volatile Memory 100%
• Zirconium Silicate 100%
• Hafnium Silicate 100%
• Hafnium Oxide 100%
• High-k Dielectric 50%
• HfO2 50%
• Silicon-oxide-nitride-oxide-silicon (SONOS) 50%
• Low Thermal Budget 50%
• Erase Speed 50%
• Charge Loss 50%
• Large Memory Window 50%
• Silicate 50%
• Long Retention Time 50%
• Trapping Layer 50%
• Bit Operation 50%
• Write Disturbance 50%
• Hf-silicate 50%

Material Science

• Oxide Compound 100%
• Zirconium 100%
• Hafnium 100%
• Silicate 100%
• Dielectric Material 25%