1/f noise in micrometer-sized ultrathin indium tin oxide films

Sheng-Shiuan Yeh; Wei Ming Hsu; Jui Kan Lee; Yao Jen Lee; Juhn-Jong Lin

doi:10.1063/1.4821938

1/f noise in micrometer-sized ultrathin indium tin oxide films

Sheng-Shiuan Yeh, Wei Ming Hsu, Jui Kan Lee, Yao Jen Lee, Juhn-Jong Lin

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1 / f law in the frequency range f ≈ 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.

原文	English
文章編號	123118
頁數	4
期刊	Applied Physics Letters
卷	103
發行號	12
DOIs	https://doi.org/10.1063/1.4821938
出版狀態	Published - 16 9月 2013

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AB - We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1 / f law in the frequency range f ≈ 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.

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1/f noise in micrometer-sized ultrathin indium tin oxide films

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