1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu, Feng Lin, Jian Li, Yuheng Lin, Junye Wu, Haofan Wang, Xiaohua Li, Shuangwu Huang, Qi Wang, Hsien Chin Chiu, Hao Chung Kuo

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

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Keyphrases

Chemistry

Engineering

Material Science