1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu, Feng Lin, Jian Li, Yuheng Lin, Junye Wu, Haofan Wang, Xiaohua Li, Shuangwu Huang, Qi Wang, Hsien Chin Chiu, Hao Chung Kuo

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Engineering & Materials Science

Chemical Compounds