1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu; Feng Lin; Jian Li; Yuheng Lin; Junye Wu; Haofan Wang; Xiaohua Li; Shuangwu Huang; Qi Wang; Hsien Chin Chiu; Hao Chung Kuo

doi:10.1109/TED.2022.3153594

1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu, Feng Lin, Jian Li, Yuheng Lin, Junye Wu, Haofan Wang, Xiaohua Li, Shuangwu Huang, Qi Wang, Hsien Chin Chiu, Hao Chung Kuo

光電工程學系

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

摘要

In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage <formula> <tex>$V_{BR}$</tex> </formula> of the diodes. Under the same testing conditions, <formula> <tex>$V_{BR}$</tex> </formula> was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance <formula> <tex>$R_{{on}}$</tex> </formula> of 5.1 mΩ · cm² and low turn-on voltage <formula> <tex>$V_{{on}}$</tex> </formula> of 0.63 V. Given <formula> <tex>$V_{{on}}$</tex> </formula> of <0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest <formula> <tex>$V_{BR}$</tex> </formula> in the reported work up to today.

原文	English
期刊	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2022.3153594
出版狀態	Accepted/In press - 2022

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@article{10c758cf5e7849408285c5d0ac54d6f8,

title = "1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination",

abstract = "In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage $V_{BR}$ of the diodes. Under the same testing conditions, $V_{BR}$ was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance $R_{{on}}$ of 5.1 mΩ · cm² and low turn-on voltage $V_{{on}}$ of 0.63 V. Given $V_{{on}}$ of <0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest $V_{BR}$ in the reported work up to today.",

keywords = "Edge termination (ET), Gallium nitride, gallium nitride (GaN)-on-GaN, Helium, helium ion implantation, high breakdown voltage, Ion implantation, Ions, Lattices, low turn-on voltage., Schottky barriers, Schottky diodes",

author = "Xinke Liu and Feng Lin and Jian Li and Yuheng Lin and Junye Wu and Haofan Wang and Xiaohua Li and Shuangwu Huang and Qi Wang and Chiu, {Hsien Chin} and Kuo, {Hao Chung}",

note = "Publisher Copyright: IEEE",

year = "2022",

doi = "10.1109/TED.2022.3153594",

language = "English",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - 1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

AU - Liu, Xinke

AU - Lin, Feng

AU - Li, Jian

AU - Lin, Yuheng

AU - Wu, Junye

AU - Wang, Haofan

AU - Li, Xiaohua

AU - Huang, Shuangwu

AU - Wang, Qi

AU - Chiu, Hsien Chin

AU - Kuo, Hao Chung

N1 - Publisher Copyright: IEEE

PY - 2022

Y1 - 2022

N2 - In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage $V_{BR}$ of the diodes. Under the same testing conditions, $V_{BR}$ was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance $R_{{on}}$ of 5.1 mΩ · cm² and low turn-on voltage $V_{{on}}$ of 0.63 V. Given $V_{{on}}$ of <0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest $V_{BR}$ in the reported work up to today.

AB - In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage $V_{BR}$ of the diodes. Under the same testing conditions, $V_{BR}$ was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance $R_{{on}}$ of 5.1 mΩ · cm² and low turn-on voltage $V_{{on}}$ of 0.63 V. Given $V_{{on}}$ of <0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest $V_{BR}$ in the reported work up to today.

KW - Edge termination (ET)

KW - Gallium nitride

KW - gallium nitride (GaN)-on-GaN

KW - Helium

KW - helium ion implantation

KW - high breakdown voltage

KW - Ion implantation

KW - Ions

KW - Lattices

KW - low turn-on voltage.

KW - Schottky barriers

KW - Schottky diodes

UR - http://www.scopus.com/inward/record.url?scp=85126284184&partnerID=8YFLogxK

U2 - 10.1109/TED.2022.3153594

DO - 10.1109/TED.2022.3153594

M3 - Article

AN - SCOPUS:85126284184

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

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