16-μm infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs

D. Zheng*, L. A. Gordon, Yew-Chuhg Wu, R. S. Feigelson, M. M. Fejer, R. L. Byer, K. L. Vodopyanov

*此作品的通信作者

研究成果: Article同行評審

69 引文 斯高帕斯(Scopus)

摘要

Tunable 90-ps 15.6-17.6-μm coherent radiation was generated by means of difference-frequency mixing in diffusion-bonded-stacked GaAs. The sample consisted of 24 alternately rotated layers with a total length of 6 mm and with low optical loss to achieve third-order quasi-phase matching. The wavelength-tuning curve was close to the theoretical prediction, demonstrating that the bonding process maintained nonlinear optical phase matching over the entire interaction length. Maximum conversion efficiency of 0.7%, or 5% internal quantum efficiency, was measured at 16.6 μm consistent with the theoretical predictions.

原文English
頁(從 - 到)1010-1012
頁數3
期刊Optics Letters
23
發行號13
DOIs
出版狀態Published - 1 7月 1998

指紋

深入研究「16-μm infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs」主題。共同形成了獨特的指紋。

引用此