TY - GEN
T1 - 15.3 A 100W and 91% GaN-Based Class-E Wireless-Power-Transfer Transmitter with Differential-Impedance-Matching Control for Charging Multiple Devices
AU - Xie, Cheng Yu
AU - Yang, Shang Hsien
AU - Lu, Shen Fu
AU - Lin, Fa Yi
AU - Lin, Yen An
AU - Ou-Yang, You Zheng
AU - Chen, Ke-Horng
AU - Liu, Kuo Chi
AU - Lin, Yin Hsi
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/2/17
Y1 - 2019/2/17
N2 - Having multiple devices charged by a wireless-power-transfer (WPT) system has become more common as illustrated in Fig. 15.3.1. A wide-power-range (no load ∼ 100 {W}), compact, and efficient WPT system needs to include the following features. First, an impedance-matching technique that achieves zero-voltage switching (ZVS) and zero voltage-derivative switching (ZVDS) on a Gallium Nitride (GaN) switch is needed to reduce the efficiency loss caused by hard switching (HS) and reverse conduction (RC). Second, under high-power conditions, it is desirable to reduce the voltage and current stress on each switch and passive components. Third, there is a need to reduce the number of external components for compact size. In [1] and [2], an external capacitor array for impedance matching occupies a large printed circuit board (PCB) area. If the output power is as high as 100W, the controlled switch needs to withstand high voltage stresses of up to 600V. The fractional-capacitance tuning technique in [3] achieves a wide range of equivalent capacitance, but there are still high-voltage-stress problems similar to [1], [2]. Although [4] provides a high-power solution, the voltage-controlled-capacitance (VCC) technique needs to tune the internal parasitic capacitance, {C}-{ {OSS}}, from 350 to 3500pF and thus requires more external components and large bias voltage {V}-{ {BIAS}}.
AB - Having multiple devices charged by a wireless-power-transfer (WPT) system has become more common as illustrated in Fig. 15.3.1. A wide-power-range (no load ∼ 100 {W}), compact, and efficient WPT system needs to include the following features. First, an impedance-matching technique that achieves zero-voltage switching (ZVS) and zero voltage-derivative switching (ZVDS) on a Gallium Nitride (GaN) switch is needed to reduce the efficiency loss caused by hard switching (HS) and reverse conduction (RC). Second, under high-power conditions, it is desirable to reduce the voltage and current stress on each switch and passive components. Third, there is a need to reduce the number of external components for compact size. In [1] and [2], an external capacitor array for impedance matching occupies a large printed circuit board (PCB) area. If the output power is as high as 100W, the controlled switch needs to withstand high voltage stresses of up to 600V. The fractional-capacitance tuning technique in [3] achieves a wide range of equivalent capacitance, but there are still high-voltage-stress problems similar to [1], [2]. Although [4] provides a high-power solution, the voltage-controlled-capacitance (VCC) technique needs to tune the internal parasitic capacitance, {C}-{ {OSS}}, from 350 to 3500pF and thus requires more external components and large bias voltage {V}-{ {BIAS}}.
UR - http://www.scopus.com/inward/record.url?scp=85063495619&partnerID=8YFLogxK
U2 - 10.1109/ISSCC.2019.8662535
DO - 10.1109/ISSCC.2019.8662535
M3 - Conference contribution
AN - SCOPUS:85063495619
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 242
EP - 244
BT - 2019 IEEE International Solid-State Circuits Conference, ISSCC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Solid-State Circuits Conference, ISSCC 2019
Y2 - 17 February 2019 through 21 February 2019
ER -