150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA

Yu Chen Chen*, Kuo-Jui Lin, Pei Yin Su, Hsu Chieh Cheng

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm2 and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.

    原文English
    主出版物標題Photonic Fiber and Crystal Devices
    主出版物子標題Advances in Materials and Innovations in Device Applications VI
    DOIs
    出版狀態Published - 1 12月 2012
    事件Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI - San Diego, CA, United States
    持續時間: 12 8月 201213 8月 2012

    出版系列

    名字Proceedings of SPIE - The International Society for Optical Engineering
    8497
    ISSN(列印)0277-786X

    Conference

    ConferencePhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI
    國家/地區United States
    城市San Diego, CA
    期間12/08/1213/08/12

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