1.0 nm Oxynitride dielectrics prepared by RTP in mixtures of N2 and O2 ambient

Kow-Ming Chang*, Wen Chih Yang, Chu Feng Chen

*此作品的通信作者

    研究成果: Article同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    This work presents a reliable method of growing aggressively scaled, 1.0 nm thick, gate dielectric in mixtures of N2 and O2 ambient at 900°C for 15 s by rapid thermal processing (RTP). These oxynitride films have excellent interface properties, 100 times lower leakage current density, and better charge trapping properties than rapid thermal oxidation SiO 2 of identical thickness prepared in pure O2 ambient. The effect of interfacial nitrogen concentration on the device characteristics with gate oxynitride films grown in various N2 /O2 gas flow ratios was also investigated. The results demonstrate that the uniform nitrogen content increases with the N2 /O2 gas flow ratio and that high-quality oxynitride films can be obtained by RTP in an optimum gas flow ratio of N2/O2 = 5/1 (slm).

    原文English
    頁(從 - 到)G119-G121
    頁數3
    期刊Electrochemical and Solid-State Letters
    7
    發行號6
    DOIs
    出版狀態Published - 16 6月 2004

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