10-13.6 Gbit/s 0.18 μm CMOS modulator drivers with 8 VPP differential output swing

D. U. Li; Chia-Ming Tsai

doi:10.1049/el:20051001

10-13.6 Gbit/s 0.18 μm CMOS modulator drivers with 8 V_PP differential output swing

D. U. Li^*, Chia-Ming Tsai

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A novel intrinsic drain-gate capacitance (C_DC) feedback network is incorporated into the conventional cascode circuit configuration to implement a 10-13.6 Gbit/s modulator driver. The driver fabricated in 0.18 μm CMOS process could generate an 8 V_PP differential output swing. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than the currently reported CMOS drivers.

原文	English
頁（從 - 到）	643-644
頁數	2
期刊	Electronics Letters
卷	41
發行號	11
DOIs	https://doi.org/10.1049/el:20051001
出版狀態	Published - 26 5月 2005

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10.1049/el:20051001

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title = "10-13.6 Gbit/s 0.18 μm CMOS modulator drivers with 8 VPP differential output swing",

abstract = "A novel intrinsic drain-gate capacitance (CDC) feedback network is incorporated into the conventional cascode circuit configuration to implement a 10-13.6 Gbit/s modulator driver. The driver fabricated in 0.18 μm CMOS process could generate an 8 VPP differential output swing. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than the currently reported CMOS drivers.",

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year = "2005",

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AU - Tsai, Chia-Ming

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N2 - A novel intrinsic drain-gate capacitance (CDC) feedback network is incorporated into the conventional cascode circuit configuration to implement a 10-13.6 Gbit/s modulator driver. The driver fabricated in 0.18 μm CMOS process could generate an 8 VPP differential output swing. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than the currently reported CMOS drivers.

AB - A novel intrinsic drain-gate capacitance (CDC) feedback network is incorporated into the conventional cascode circuit configuration to implement a 10-13.6 Gbit/s modulator driver. The driver fabricated in 0.18 μm CMOS process could generate an 8 VPP differential output swing. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than the currently reported CMOS drivers.

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M3 - Article

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JO - Electronics Letters

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IS - 11

ER -

10-13.6 Gbit/s 0.18 μm CMOS modulator drivers with 8 VPP differential output swing

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10-13.6 Gbit/s 0.18 μm CMOS modulator drivers with 8 V_PP differential output swing