0.67 μm2 self-aligned shallow trench isolation cell (SA-STI cell) for 3 V-only 256 Mbit NAND EEPROMs

S. Aritome*, S. Satoh, T. Maruyama, H. Watanabe, S. Shuto, G. J. Hemink, Riichiro Shirota, S. Watanabe, F. Masuoka

*此作品的通信作者

研究成果: Conference article同行評審

45 引文 斯高帕斯(Scopus)

摘要

The process technologies and the device performance of the SA-STI cell, which can be used to realize NAND EEPROMs of 256 Mbit and beyond is described. This structure reduces the cell size without scaling of the device dimension. The operation method for the NAND cell was also developed. A bi-polarity Fowler-Nordheim tunneling write/erase method can be used since this method achieves high reliability, high-speed programming and small sector size, which makes it a most promising candidate to replace magnetic disk memory.

原文English
頁(從 - 到)61-64
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 12月 1994
事件Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
持續時間: 11 12月 199414 12月 1994

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