0.2V adiabatic NC-FinFET with 0.6mA/μm ION and 0.1nA/μm IOFF

Chen-Ming Hu, Sayeef Salahuddin, Cheng I. Lin, Asif Khan

研究成果: Conference contribution同行評審

50 引文 斯高帕斯(Scopus)

摘要

We present for the first time a Negative Capacitance (NC) FinFET. Simulation shows 0.2V operation with 0.6mA/μm on-current and 100pA/μm leakage current. A simple model guides the optimization of the ferroelectric film and the FinFET in the NC-FinFET. Our finding that a weak ferroelectric material is preferable greatly increases the candidate material classes and we report the target properties to search for. Counterintuitively, the gate to S/D capacitance and a thicker EOT both reduce the required VDD. NC-FinFET is good for high performance and very low power applications.

原文English
主出版物標題73rd Annual Device Research Conference, DRC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面39-40
頁數2
ISBN(電子)9781467381345
DOIs
出版狀態Published - 3 8月 2015
事件73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
持續時間: 21 6月 201524 6月 2015

出版系列

名字Device Research Conference - Conference Digest, DRC
2015-August
ISSN(列印)1548-3770

Conference

Conference73rd Annual Device Research Conference, DRC 2015
國家/地區United States
城市Columbus
期間21/06/1524/06/15

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