0.25 μm CoSi2 salicide CMOS technology thermally stable up to 1,000 °C with high TDDB reliability

T. Ohguro*, S. Nakamura, E. Morifuji, T. Yoshitomi, T. Morimoto, H. Harakawa, H. S. Momose, Y. Katsumata, H. Iwai

*此作品的通信作者

研究成果: Conference article同行評審

6 引文 斯高帕斯(Scopus)

摘要

An emerging trend in semiconductor device manufacturing is the use of CoSi2 salicide technology for 0.25 μm CMOS devices. This methodology offers low sheet and gate resistances, allowing noise figures of less than 1 dB, particularly for analog MOSFETs. Moreover, this technology can produce CMOS devices that exhibit good thermodynamic stability up to 1,000 °C.

原文English
頁(從 - 到)101-102
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
出版狀態Published - 1997
事件Proceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn
持續時間: 10 6月 199712 6月 1997

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