0.18 μm low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

T. Ohguro*, H. Naruse, H. Sugaya, E. Morifuji, S. Nakamura, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai

*此作品的通信作者

研究成果: Conference article同行評審

17 引文 斯高帕斯(Scopus)

摘要

We introduce 0.18 μm CMOS with multi-Vth's for mixed high-speed digital and RF-analog applications. The Vth's of MOSFETs for digital circuits are 0.4 V for NMOS and -0.4 V for PMOS, respectively. In addition, there are n-MOSFETs with zero-volt-Vth for RF analog circuits. The zero-volt-Vth MOSFETs were made by using undoped epitaxial layer for the channel regions. Though the epitaxial film was grown by reduced pressure chemical vapor deposition (RP-CVD), the film quality is good because higher pre-heating temperature (940 °C for 30 seconds) is used in H2 atmosphere before epitaxial growth. The epitaxial channel MOSFET shows higher peak gm and fT than those of bulk cases. Furthermore, the gm and fT values show significantly improved performances under the low supply voltage, which is important for 0.18 μm CMOS with low power/low supply voltage operation. Additionally, in our experiment no significant difference was observed between the reliability of gate oxide grown on bulk and the reliability of that grown on epitaxial layers. The undoped-epitaxial-channel MOSFETs with zero-Vth will be effective to realize high performance and low power CMOS devices for mixed digital and RF-analog applications.

原文English
頁(從 - 到)837-840
頁數4
期刊Technical Digest - International Electron Devices Meeting, IEDM
DOIs
出版狀態Published - 1997
事件1997 International Electron Devices Meeting - Washington, DC, USA
持續時間: 7 12月 199710 12月 1997

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