0.13μm low voltage logic based RF CMOS technology with 115GHz f T and 80GHz fMAX

J. C. Guo, C. H. Huang, K. T. Chan, W. Y. Lien, C. M. Wu, Y. C. Sun

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

Superior RF CMOS of 115 fT and 80GHz fMAXhas been realized by 0.13/spl mu/m low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NF/sub min/ of 2.2 dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P/sub 1dB/ of near 10dBm can fit Bluetooth requirement and 55% PAE at 2.4GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.

原文English
主出版物標題Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
發行者IEEE Computer Society
頁面683-686
頁數4
ISBN(列印)1580538355, 9781580538350
DOIs
出版狀態Published - 1 1月 2003
事件33rd European Microwave Conference, EuMC 2003 - Munich, Germany
持續時間: 7 10月 20037 10月 2003

出版系列

名字Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
2

Conference

Conference33rd European Microwave Conference, EuMC 2003
國家/地區Germany
城市Munich
期間7/10/037/10/03

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