薄膜電晶體的製造方法

@misc{1d5a4a6abb1f4f399d35b2467d64a4ce,

title = "薄膜電晶體的製造方法",

author = "Po-Tsun Liu",

year = "2018",

month = sep,

day = "21",

language = "???core.languages.zh_TW???",

type = "Patent",

note = "I636507",

}

薄膜電晶體的製造方法. / Liu, Po-Tsun (Inventor).
專利號: I636507. 9月 21, 2018.

研究成果: Patent

TY - PAT

T1 - 薄膜電晶體的製造方法

AU - Liu, Po-Tsun

PY - 2018/9/21

Y1 - 2018/9/21

M3 - Patent

M1 - I636507

ER -

Liu PT, 發明者. 薄膜電晶體的製造方法. I636507. 2018 9月 21.

引用此