多晶半導體薄膜、薄膜電晶體及其製造方法

Cheng, Huang-Chung (Inventor). / 多晶半導體薄膜、薄膜電晶體及其製造方法. 專利號: I636495. 9月 21, 2018.

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title = "多晶半導體薄膜、薄膜電晶體及其製造方法",

author = "Huang-Chung Cheng",

year = "2018",

month = sep,

day = "21",

language = "???core.languages.zh_TW???",

type = "Patent",

note = "I636495",

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多晶半導體薄膜、薄膜電晶體及其製造方法. / Cheng, Huang-Chung (Inventor).
專利號: I636495. 9月 21, 2018.

研究成果: Patent

TY - PAT

T1 - 多晶半導體薄膜、薄膜電晶體及其製造方法

AU - Cheng, Huang-Chung

PY - 2018/9/21

Y1 - 2018/9/21

M3 - Patent

M1 - I636495

ER -

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