場效電晶體結構

Chang, C.-Y. (2017). 場效電晶體結構. (專利號 I574402).

Chang, Chun-Yen (Inventor). / 場效電晶體結構. 專利號: I574402. 3月 11, 2017.

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title = "場效電晶體結構",

author = "Chun-Yen Chang",

year = "2017",

month = mar,

day = "11",

language = "???core.languages.zh_TW???",

type = "Patent",

note = "I574402",

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Chang, C-Y 3月. 11 2017, 場效電晶體結構, 專利號 I574402.

場效電晶體結構. / Chang, Chun-Yen (Inventor).
專利號: I574402. 3月 11, 2017.

研究成果: Patent

TY - PAT

T1 - 場效電晶體結構

AU - Chang, Chun-Yen

PY - 2017/3/11

Y1 - 2017/3/11

M3 - Patent

M1 - I574402

ER -

Chang CY, 發明者. 場效電晶體結構. I574402. 2017 3月 11.

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