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查看斯高帕斯 (Scopus) 概要
楊 斯博
教授
光電系統研究所
電話
06-3032121#57762
電子郵件
zupoyang
nycu.edu
tw
h-index
h10-index
h5-index
1968
引文
21
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
901
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
141
引文
8
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1998 …
2025
每年研究成果
概覽
指紋
網路
計畫
(10)
研究成果
(83)
類似的個人檔案
(6)
指紋
查看啟用 Zu-Po Yang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Light-emitting Electrochemical Cells
97%
White Light
57%
Light-emitting Diodes
34%
Color Temperature
29%
Color Conversion Layer
25%
Random Laser
24%
Ag Nanoparticles (AgNPs)
24%
Plasmonics
22%
Lasing Emission
19%
Cell-based
19%
Solar Cell
17%
Localized Surface Plasmon Resonance
17%
Atomic Layer Deposition
17%
Ionic Transition Metal Complexes
17%
Rutile
16%
Electroluminescence
16%
Polyethylene Terephthalate Substrate
15%
NZnO
15%
P-GaN
15%
TiO2 Film
15%
Chemical Etching
15%
Cationic Iridium(III) Complex
15%
TiO2 Thin Film
14%
Light Source
14%
Red Quantum Dots
12%
Near-infrared Light
12%
Flexible Substrate
12%
Dark Materials
12%
ZnO Nanorods
12%
Plasmonic Filter
12%
Quantum Dots
11%
Transport Mean Free Path
11%
Spectral Emission
11%
Scatterer
11%
ZnO Nanowires
11%
Lasing Threshold
11%
InAlAs
11%
Experimental Realization
11%
Gallium Arsenide
11%
Photoreflectance
11%
Random Lasing
11%
Diffuser
11%
Surface Passivation
11%
Titanium Nitride
11%
Silicon Solar Cells
11%
Patterned Sapphire Substrate
10%
Room Temperature
10%
Optical Simulation
10%
GaN-based Light-emitting Diodes
10%
MOSFET
10%
Material Science
Electrochemical Cell
100%
Film
46%
Silicon
36%
Surface (Surface Science)
35%
ZnO
35%
Quantum Dot
35%
Light-Emitting Diode
33%
Electroluminescence
30%
Titanium Dioxide
25%
Nanowire
25%
Nanoparticle
23%
Nitride Compound
22%
Solar Cell
20%
Nanorod
20%
Polyethylene Terephthalate
20%
Coordination Compound
17%
Density
17%
Titanium
17%
Thin Films
16%
Wet Etching
15%
Photonic Crystal
15%
Iridium
13%
Heterojunction
13%
Carbon Nanotube
12%
Sapphire
12%
Refractive Index
11%
Surface Passivation
11%
Silicon Solar Cell
10%
Quantum Well
10%
Gallium Arsenide
10%
Nanotube
10%
Molecular Beam Epitaxy
10%
Perovskite Nanocrystal
10%
Electrochromics
10%
Surface Plasmon Resonance
9%
Light Scattering
9%
Antireflection Coating
8%
Photonic Band Gap
8%
Transistor
7%
Nanostructure
7%
Cathode
7%
Device Efficiency
7%
Indium Tin Oxide
7%
Optical Property
6%
Titanium Oxide
6%
Annealing
6%
Surface Roughness
6%
Gallium Nitride
6%
Porous Silicon
6%
Phase Composition
5%
Engineering
Emitting Light
83%
Light-Emitting Diode
34%
Color Temperature
32%
Quantum Dot
30%
Luminaires
29%
Plasmonics
26%
Light Source
24%
Solar Cell
24%
Reflectance
19%
Passivation
17%
Thin Films
16%
Nanorod
16%
Nanoparticle
15%
Spectral Emission
15%
Mean Free Path
15%
Nanowire
15%
Scatterer
15%
Surface Plasmon
13%
Flexible Substrate
12%
Heterojunctions
12%
Nitride
11%
Speckle
11%
Atomic Layer Deposition
11%
Sapphire Substrate
11%
Carbon Nanotube
11%
Refractive Index
11%
Refractivity
11%
Diffusers
10%
Notch Filters
10%
Nanotube
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Infrared Light
10%
Monolithic Integration
10%
Speckle Reduction
10%
Sensing System
10%
Experimental Observation
10%
Gallium Arsenide
10%
Quantum Well
10%
Two Dimensional
10%
Lasing Wavelength
10%
Ray Diffraction
9%
Indium-Tin-Oxide
8%
External Quantum Efficiency
8%
Blue Light
8%
Atomic Force Microscopy
8%
Electric Field
8%
Low-Temperature
8%
Emissive Material
7%
Surface State
7%
Growth Mechanism
7%
