跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
林 岳欽
約聘研究員
電子與資訊研究中心
h-index
h10-index
h5-index
280
引文
9
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
72
引文
5
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
70
引文
5
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2009
2025
每年研究成果
概覽
指紋
網路
研究成果
(55)
類似的個人檔案
(5)
指紋
查看啟用 Yueh-Chin Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
GaN HEMT
100%
Ka-band
84%
AlGaN-GaN
78%
Band Application
61%
High Electron Mobility Transistor
32%
Through Silicon via
26%
Low Noise
26%
Device Performance
25%
3D IC
21%
High Linearity
19%
Ohmic
19%
Foundry Technology
17%
OIP3
17%
NFmin
16%
Gate Length
16%
Power Added Efficiency
16%
Fmax
15%
Fabrication Methods
15%
Gate Structure
14%
CMOS Devices
14%
High-frequency Operation
14%
Millimeter Wave
13%
Aluminum Oxide
13%
Aluminum Gallium Nitride (AlGaN)
13%
P-GaN
13%
Si Substrate
13%
High Performance
13%
Parasitic Capacitance
12%
Noise Performance
11%
Current Density
10%
SiNx
10%
Small Gate
10%
Third-order Intercept Point
10%
Minimum Noise Figure
10%
Maximum Oscillation Frequency
10%
Maximum Transconductance
9%
Au-free
9%
Drain Bias
8%
Electrical Characteristics
8%
Threshold Voltage
8%
Transconductance
8%
Source Resistance
8%
Gate Width
8%
Power Performance
8%
Millimeter-wave Applications
7%
Integrated Circuits
7%
High Density
7%
Noise Figure
7%
TiAl
7%
Radio Frequency Performance
7%
Engineering
Ka-Band
88%
Power Density
27%
Device Performance
26%
Noise Figure
21%
Nodes
19%
Three Dimensional Integrated Circuits
19%
Millimeter Wave
19%
Power Added Efficiency
19%
Output Power
19%
Gate Length
18%
Noise Performance
18%
Cutoff Frequency
16%
Order Intercept Point
16%
Frequency Operation
15%
Parasitic Capacitance
14%
Interconnects
13%
Ohmic Contacts
13%
Drain Bias
13%
Scattering Parameters
12%
Metallizations
9%
Gate Dielectric
9%
Integrated Circuit
9%
Maximum Output Power
9%
Gate Width
9%
Lithography
8%
Buffer Layer
8%
Barrier Layer
8%
Parasitic Resistance
8%
Radio Frequency
7%
Stress Field
6%
Current Drain
6%
Indium Gallium Arsenide
6%
Surface Treatment Technique
6%
Metal Gate
6%
Interposer
6%
Induced Stress
6%
Si Substrate
6%
Source Resistance
6%
High Aspect Ratio
6%
Phase Composition
6%
High Power Amplifier
6%
Pull System
6%
Electrical Performance
6%
Current Ratio
5%
Intermodulation
5%
Enabling Technology
5%
