每年研究成果
每年研究成果
個人檔案
教育/學術資格
PhD, 材料科學與工程, National Chiao Tung Univerisity
指紋
查看啟用 Yueh-Chin Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band
Lee, P. H., Lin, Y. C., Hsu, H. T., Tsao, Y. F., Dee, C. F., Su, P. & Chang, E. Y., 2023, (Accepted/In press) 於: IEEE Journal of the Electron Devices Society. p. 1 1 p.研究成果: Article › 同行評審
開啟存取 -
Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications
Huang, K. N., Lin, Y. C., Wu, C. Y., Lee, J. H., Hsu, C. C., Yao, J. N., Chien, C. H. & Chang, E. Y., 2023, (Accepted/In press) 於: Journal of Electronic Materials.研究成果: Article › 同行評審
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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
Weng, Y. C., Lin, Y. C., Hsu, H. T., Kao, M. L., Huang, H. Y., Ueda, D., Ha, M. T. H., Yang, C. Y., Maa, J. S., Chang, E. Y. & Dee, C. F., 1 2月 2022, 於: Materials. 15, 3, p. 1-10 10 p., 703.研究成果: Article › 同行評審
開啟存取2 引文 斯高帕斯（Scopus） -
Effect of the Indium Compositions in Tri-Gate InxGa1−xAs HEMTs for High-Frequency Low Noise Application
Wang, C., Kuo, C. N., Lin, Y. C., Hsu, H. T., Tsao, Y. F., Lee, C. T. & Chang, E. Y., 11月 2022, 於: ECS Journal of Solid State Science and Technology. 11, 11, 115006.研究成果: Article › 同行評審
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Investigation of p-GaN Gate HEMT using Removal Si Substrate and part of Buffer Layer
Lin, Y-C., Chiu, Y. S. & Chang, E. Y., 2022, Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc., (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022).研究成果: Conference contribution › 同行評審